AP2N025N advanced power n-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss 20v lower gate charge r ds(on) 25m surface mount package i d 5.7a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice 1 201505281 halogen-free product parameter rating drain-source voltage 20 gate-source voltage + 12 drain current 3 , v gs @ 4.5v 5.7 drain current 3 , v gs @ 4.5v 4.6 pulsed drain current 1 20 total power dissipation 1.25 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s ap2n025 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the sot-23s package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. d g s sot-23s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v v gs =4.5v, i d =5a - - 25 m v gs =2.5v, i d =2.5a - - 39 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transconductance v ds =5v, i d =5a - 19 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 12v, v ds =0v - - + 100 na q g total gate charge i d =5a - 8 12.8 nc q gs gate-source charge v ds =10v - 1 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =10v - 6 - ns t r rise time i d =1a - 20 - ns t d(off) turn-off delay time r g =3.3 ? -15- ns t f fall time v gs =5v - 18 - ns c iss input capacitance v gs =0v - 700 1100 pf c oss output capacitance v ds =10v - 155 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =5a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10s ; 300 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2N025N static drain-source on-resistance 2 r ds(on) .
AP2N025N fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 4.0v 3.5v 3.0v v g =2.5v 0 4 8 12 16 0 0.2 0.4 0.6 0.8 1 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 5.0v 4.5v 4.0v 3.5v 3.0v v g =2.5v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -100 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) i d = 250ua 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =4.5v 0 20 40 60 80 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 2.5a t a = 25 o c .
AP2N025N fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =10v 0 200 400 600 800 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja =300 /w 0.02 q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on) .
AP2N025N fig 13. drain current v.s. ambient fig 14. total power dissipation temperature fig 15. typ. drain-source on state fig 16. transfer characteristics resistance 5 0 0.4 0.8 1.2 1.6 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 10 20 30 40 50 60 024681012 i d , drain current (a) r ds(on) (m ) t j =25 o c 2.5v v gs =4.5v 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) 0 4 8 12 16 0123 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c .
AP2N025N marking information 5 part number : a06 a06ss date code : ss ss:2004,2008,2012,2016,2020... ss :2003,2007,2011,2015,2019... s s:2002,2006,2010,2014,2018... ss :2001,2005,2009,2013,2017... .
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